A 10 GHz Compact Balun with Common Inductor on CMOS Process

A 10 dBm 2.4 GHz CMOS PA

This report describes the assessment and design of a 10 dBm 2.4 GHz CMOS PA including driver stage. The PA is designed in a 0.18 μm CMOS technology. A three stage PA has been designed due to the high voltage gain needed. Class F has been chosen for the output stage. An output filter short-circuiting the second harmonic frequency and reflecting the third harmonic frequency is used to obtain the ...

6 GHz RF CMOS Active Inductor Band Pass Filter Design and Process Variation Detection

A 10-GHz 15-dB four-stage distributed amplifier in 0.18 µm CMOS process

This paper presents a four-stage CMOS distributed amplifier (DA) design implemented in standard 0.18 μm CMOS technology. The proposed design eliminates the need for transmission line capacitors and, consequently, uses significantly smaller spiral inductors compared with the previous designs. Using the minimum size inductor, the bandwidth of the amplifiers is extended, and the quality factors of...

A Broadband Monolithic Balun Based on 0.13μ CMOS

The design of a broadband monolithic passive balun using planar-spiral transformers structure is described. Operational frequencies range from 20-30 GHz, and the center frequency is 23 GHz. The performance of the balun is simulated, and results are: the amplitude and phase unbalance between two balanced ports are less than 3 dB and from 20 to 30 GHz for the same frequency range 10, respectively...

A CMOS 2.0-11.2 GHz UWB LNA using active inductor circuit

A fully-active low-noise amplifier (LNA) for ultrawideband application is presented. Passive on-chip inductor of conventional LNA design is replaced by low-noise active inductor, significantly reducing the total chip area of the proposed CMOS LNA. The core LNA circuit is a cascoded common-source amplifier loaded with an active inductor. Two buffer stages are used to provide the required input a...